Growth of ZnO nanorods using hydrothermal and modified chemical bath deposition for device applications.

dc.contributor.authorMohammad, Sabah M.
dc.date.accessioned2018-08-20T01:05:18Z
dc.date.available2018-08-20T01:05:18Z
dc.date.issued2017-03
dc.description.abstractZink oksida (ZnO) adalah semikonduktor jurang jalur lebar yang berpotensi dalam aplikasi peranti elektronik dan peranti optoelektronik berkecekapan tinggi. Kajian ini mengandungi dua objektif. Pertama, adalah untuk mensintesis nanorod (NRs) ZnO yang sejajar, menegak dan condong di atas substrat nilon melalui kaedah hidroterma, dan seterusnya memfabrikasikan pengesan foto ultra ungu (UV-PDs) yang berkos rendah dan sangat fleksibel dan peranti pengesan gas hidrogen (H2). Zinc oxide (ZnO) is a promising wide band gap semiconductor with applications in high efficiency electronic and optoelectronic devices. The present study follows two objectives. First, synthesis of vertical and inclined well-aligned ZnO nanorods (NRs) on a nylon substrate via the hydrothermal method, and subsequently fabricate the highly flexible low-cost ultraviolet photodiodes (UV-PDs) and hydrogen (H2) gas sensor devices.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/6361
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectNanorodsen_US
dc.subjectChemical bathen_US
dc.titleGrowth of ZnO nanorods using hydrothermal and modified chemical bath deposition for device applications.en_US
dc.typeThesisen_US
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