Particle Removal In Post Chemical-Mechanical Planarization (Cmp) Cleaning Process: Experimental And Modeling Studies

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dc.contributor.authorLok Yian, Han
dc.date.accessioned2018-08-03T02:40:21Z
dc.date.available2018-08-03T02:40:21Z
dc.date.issued2009-06
dc.description.abstractThe post chemical mechanical planarization (CMP) cleaning became very important in wafer technology as one of its objectives was to manufacture high quality surfaces of fine dimensions. This study comprises of an experimental as well as a theoretical study on particle removal efficiency mainly silicon dioxide (SiO2) particles from wafer surface after chemical mechanical planarization (CMP) cleaning. The particle removal capacity from wafer surface in buffing (cleaning) disk was studied using de-ionized water and citric acid at different flow rates (200 ml/min to 400 ml/min) buffing disc pressure (1psi, 2psi and 3psi) and relative buffing disc speeds setting (0rpm, 1rpm and 2rpm). The removal efficiency in each case was evaluated using a particle count based on measurements with a laser scattering equipment (SP1 KLA Tenor). Particle removal efficiency was found to be increased with flow rates, buffing disc pressure and buffing disc speeds. A Response Surface Methodology (RSM) couple with central composite design (CCD) was used in order to study the particle removal efficiency in the buffing disc for citric acid and de-ionized water. Both citric acid and de-ionized water showed satisfactory correlation with experimental value with correlation coefficient ³ 0.92. The significant factors affecting the particle removal efficiency were buffing disc pressure, relative buff rotational speed setting and chemical flow rate. A mathematical model was also developed to correlate the particle removal efficiency in buffing disk with flow rate of chemical, buffing disc pressure and relative buffing disc rotational speed. In this case, the individual forces acting on a particle, namely frictional force, hydrodynamic fluid drag force, adhesion force and capillary force acting on a particle were analyzed. A theoretical model was developed taking into account the resultant forces on the particle and the toppling moments on a particle embedded in a wafer at varying depths. Simulations were also carried out using the model based on the physical variables such as fluid properties, frictional properties and operational parameters (flow rates, buff pressure and disc speeds). The evaluation of particle removal efficiency in this simulation was compared with experimental results. The experimental data and the model fitted well with a correlation coefficient of 0.97 and 0.85 for de-ionized water and citric acid, respectively.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/6165
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectParticle Removal In Post Chemical-Mechanical Planarization (Cmp) Cleaning Processen_US
dc.subjectExperimental And Modeling Studiesen_US
dc.titleParticle Removal In Post Chemical-Mechanical Planarization (Cmp) Cleaning Process: Experimental And Modeling Studiesen_US
dc.typeThesisen_US
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