Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
Loading...
Date
2014-01
Authors
Hosseinghadiry, Mahdiar
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
Since 2004, graphene as transistor channel has drawn huge amount of attention due to
its extraordinary scalability and high carrier mobility. In order to open required bandgap, its
nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon
field effect transistors (GNRFET) is needed to investigate the limits on operating voltage
of the transistor. However, until now there is no study in analytical approach and modelling of
the breakdown voltage (BV) effects on the graphene-based transistors. Thus, in this project,
semi-analytical models for lateral electric field, length of velocity saturation region (LVSR),
ionization coefficient (α), and breakdown voltage (BV) of single- and double-gate graphene
nanoribbon field effect transistors (GNRFET) are proposed. As the methodology, the application
of Gauss’s law at drain and source regions is employed in order to derive surface potential
and lateral electric field equations. Then, LVSR is calculated as a solution of surface potential
at saturation condition. The ionization coefficient is modelled and calculated by deriving
equations for probability of collisions in ballistic and drift modes based on lucky drift theory of
ionization. Then the threshold energy of ionization is computed using simulation and an empirical
equation is derived semi-analytically. Finally avalanche breakdown condition is employed
to calculate the lateral BV. As a result of this research, simple analytical and semi-analytical
models are proposed for the LVSR,α, and BV, which could be used in design and optimization
of semiconductor devices and sensors.
Description
Keywords
Breakdown Effect , Graphene Nanoribbon