Synthesis And Optimization Of Copper Oxide As P-Type Transparent Conducting Oxide
| dc.contributor.author | Jani, Nur Aimi | |
| dc.date.accessioned | 2018-06-11T07:36:13Z | |
| dc.date.available | 2018-06-11T07:36:13Z | |
| dc.date.issued | 2010-05 | |
| dc.description.abstract | The main focus of this research is to synthesis and to optimize the properties of thin copper oxides (CuO) films as a p-type transparent conducting oxide (TCO) produced by chemical solution deposition (CSD) technique through nitrate route using dip coating process. To obtain the optimum condition for the formation of thin CuO films, various parameters were studied including different concentrations, number of coatings, withdrawal rates, surfactants and different substrates were used for depositing thin CuO film. Effect of annealing temperature at different atmosphere and different annealing time were also conducted. The results showed that, single phase of CuO was formed after Cu precursor solution coated on glass substrate was annealed for 1 hour in air at 500 oC. The optimum condition for the formation of homogeneous thin CuO films with the best coating quality was identified. The precursor solution has to have concentration of 120 mmol of Cu (NO3)2.21/2 H2O and deposition was to be done 3 times and with the use of withdrawal rate of 15 cm/min. The scheme of formation was proposed in this work after considering all of the parameters. Under this optimized condition, 240 nm thick films with an average grain size of 80 nm were produced. The optical properties of thin CuO films were studied. The optimum film has transparency of 70% from 400 to 800 nm of visible light with optical band gap value, Eg equal to 2.1 eV were obtained. The highest electrical conductivity measured was approximately 2.34 x 10-4 (Ωcm)-1. After the optimum condition of the formation thin p-type CuO film successfully formed, the film was deposited on n-ITO glass for p-n junction characterization. The diode property with 3 V of breakdown voltage was gathered by two-point probe technique. | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/5731 | |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Sains Malaysia | en_US |
| dc.subject | To synthesis and to optimize the properties | en_US |
| dc.subject | of thin copper oxides films as a p-type transparent | en_US |
| dc.title | Synthesis And Optimization Of Copper Oxide As P-Type Transparent Conducting Oxide | en_US |
| dc.type | Thesis | en_US |
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