The Effects Of Ytterbium Doping Upon The Structural And Electrical Transport Properties Of Lead Chalcogenide Alloy Thin Films For Thermoelectric Applications

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dc.contributor.authorAbd Alkadhim, Arshad Hmood
dc.date.accessioned2019-04-15T08:24:17Z
dc.date.available2019-04-15T08:24:17Z
dc.date.issued2013-07
dc.description.abstractMotivated by the numerous energy applications of thermoelectric (TE), such as power generation, this study aims to develop novel TE materials with high TE power factor. First, the binary and ternary Pb1-xYbxTe, Pb1-xYbxSe (0.0 x 0.105), PbSe1-xTex (0.0 x 0.10) and the quaternary Pb1-xYbxSe0.2Te0.8 (0.0 x 0.105) lead chalcogenide semiconductor ingots with different Yb-mole fractions were synthesized via solid state microwave standard technique. Second, the aforementioned sets of lead chalcogenide TE thin films were grown via the thermal evaporation technique on glass substrates. The structural properties of the binary, ternary and quaternary lead chalcogenide semiconductors were characterized using several tools, including scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), atomic force microscopy (AFM), and high-resolution X-ray diffraction (HR-XRD). The tools used for electrical characterization included measurements for electrical conductivity, Hall effect, and Seebeck coefficient for calculating TE power factor, and I–V characterizations of TE generators.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/8007
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectYtterbium Dopingen_US
dc.subjectLead Chalcogenide Alloy Thin Filmsen_US
dc.titleThe Effects Of Ytterbium Doping Upon The Structural And Electrical Transport Properties Of Lead Chalcogenide Alloy Thin Films For Thermoelectric Applicationsen_US
dc.typeThesisen_US
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