Investigation of low dielectric constant (k) films for deep sub-micron CMOS application.

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dc.contributor.authorKuan Yew, Cheon'g
dc.date.accessioned2017-09-21T03:16:37Z
dc.date.available2017-09-21T03:16:37Z
dc.date.issued2007
dc.description.abstractSilica (Si02) thin film on Si with low dielectric constant (k) properties has been systematically prepared and investigated. Two types of this low-k material have been deposited on Si via sol-gel spin-on coating. Filem nipis silika (Si02) yang berpemalar dieletrik rendah endap di atas Si tlah disediakan dan dikaji dengan sistematik. Dua jenis film nipis telah disediakan menggunkan pemutaran sol-gel.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4658
dc.subjectPengendapan Sol-gelen_US
dc.subjectSol-gel depositionen_US
dc.subjectPemalar dieletrik rendahen_US
dc.subjectLow dielectric constanten_US
dc.subjectFilem nipisen_US
dc.subjectThin filemen_US
dc.titleInvestigation of low dielectric constant (k) films for deep sub-micron CMOS application.en_US
dc.typeTechnical Reporten_US
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