Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique.

dc.contributor.author	Adnan, Mohd Azam Mohd
dc.date.accessioned	2018-12-05T02:13:47Z
dc.date.available	2018-12-05T02:13:47Z
dc.date.issued	2011-03
dc.description.abstract	Pembentukan silikon berstruktur nano melalui teknik pengewapan terma telah dikaji dengan fungsi suhu penyepuhlindap dan pemangkin yang memainkan peranan penting dalam proses ini. Serbuk silikon sebagai bahan mentah telah digunakan bagi membolehkan pengewapan berlaku pada suhu yang tinggi (900-1100oC) dalam aliran gas argon (Ar). The formation of silicon nanostructures, via thermal evaporation techniques, was studied as a function of annealing temperature and catalyst (Au and AuPd).The silicon powder, serving as the starting source material, was evaporated at a high temperature (900-1100°C) in the flow of argon gas.	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/7199
dc.language.iso	en	en_US
dc.publisher	Universiti Sains Malaysia	en_US
dc.subject	Silicon	en_US
dc.subject	Nanostructures	en_US
dc.title	Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique.	en_US
dc.type	Thesis	en_US

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