Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

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dc.contributor.authorKamarulzaman, Azharul Ariff
dc.date.accessioned2020-10-27T07:37:14Z
dc.date.available2020-10-27T07:37:14Z
dc.date.issued2017-12
dc.description.abstractThis thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/10642
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectPolycrystalline Gan Layer On M-Plane Sapphireen_US
dc.subjectMetal-Semiconductor-Metal Photodetectoren_US
dc.titlePolycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetectoren_US
dc.typeThesisen_US
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Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Tesis