Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
Loading...
Date
2008
Authors
Cheong, Kuan Yew
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130.
Description
Keywords
Penganodan , Anodization , Ketumpatan perangkap antara-muka , Interface trap density , Kapasitor logam-oksida-semikonduktor , Metal-oxide-semiconductor capacitor