Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.

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dc.contributor.authorCheong, Kuan Yew
dc.date.accessioned2017-09-12T04:43:18Z
dc.date.available2017-09-12T04:43:18Z
dc.date.issued2008
dc.description.abstractAnodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4614
dc.subjectPenganodanen_US
dc.subjectAnodizationen_US
dc.subjectKetumpatan perangkap antara-mukaen_US
dc.subjectInterface trap densityen_US
dc.subjectKapasitor logam-oksida-semikonduktoren_US
dc.subjectMetal-oxide-semiconductor capacitoren_US
dc.titleDevelopment Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.en_US
dc.typeTechnical Reporten_US
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