Feasibility Study Of Zno Nanorods For Sensor Application
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Date
2013-04
Authors
Ridhuan, Nur Syafinaz
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
Zinc oxide (ZnO) has received a considerable interest because of its excellent electronic, optical, and photonic properties, as well as a wide band gap of 3.2 eV that benefits short-wavelength optoelectronic applications. This work describes the properties of 1D ZnO nanorods (NRs) arrays synthesized using a low temperature hydrothermal method on ZnO seeds/Si wafer. Heat treated ZnO seeds layer were used to control the morphology and properties of the grown ZnO nanorods. The effects of several hydrothermal parameters on the formation of ZnO NRs and its performance for ultraviolet (UV) and O2 gas sensing were studied. The optimum heat treatment temperature to produce uniform nanosize ZnO seeds was 400 °C. The optimum hydrothermal reaction temperature to produce blunt tip-like nanorods (~770 nm long and ~80 nm diameter) were 0.1 M zinc nitrate, pH 7, and 4 h of growth duration with a high responsivity at 3.61 × 10-5A/W of UV sensing. High performance UV sensing of ZnO NRs compared to ZnO film is due to the large surface area to volume. The optimum doping concentration of Al and In is 5 mM with higher responsitivity of 23.56 A/W and 1.48 A/W, respectively, compared to undoped ZnO NRs. Furthermore, high sensitivity of ZnO nanorods (1.41 10-7A) compared to ZnO film (1.85 10-6 A) in O2 environment was observed that was attributed to high surface area available for O2 gas reaction. High current of Al-doped ZnO NRs (6.88 10-7 A) and In-doped ZnO NRs (2.90 10-7 A) compared to ZnO NRs was observed due to excess electron presence.
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Keywords
Zno Nanorods , Sensor Application