Photoresist stripping using ozone gas in lithography process
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Date
2003-03
Authors
Lim, Hoo Kooi
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Abstract
An environmentally friendly process has successfully removed photoresist and organic
post-etch residues from silicon surface. A moist ozone gas phase process described
greatly increases organic removal efficiency and can reduce conventional chemical
usage. However, due to low stripping rate with this technique, it still cannot replace
existing technique m current semiconductor manufacturing which are usmg
combination of wet and dry stripping treatments. In response to those drawbacks,
photoresist stripping process using combination of deep ultraviolet (DUV) curing and
ozonated chemistry has been investigated. Results show that this technique effectively
remove the photoresist from the wafer's surface and with better stripping rate when
compared to normal ozonated chemistries photoresist stripping technique. This is
expected to replace the sulfuric based and plasma stripping process step in Ie
production.
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Keywords
An environmentally friendly process has successfully removed , photoresist and organic post-etch residues from silicon surface.