Photoresist stripping using ozone gas in lithography process

dc.contributor.author	Lim, Hoo Kooi
dc.date.accessioned	2016-11-01T03:42:10Z
dc.date.available	2016-11-01T03:42:10Z
dc.date.issued	2003-03
dc.description.abstract	An environmentally friendly process has successfully removed photoresist and organic post-etch residues from silicon surface. A moist ozone gas phase process described greatly increases organic removal efficiency and can reduce conventional chemical usage. However, due to low stripping rate with this technique, it still cannot replace existing technique m current semiconductor manufacturing which are usmg combination of wet and dry stripping treatments. In response to those drawbacks, photoresist stripping process using combination of deep ultraviolet (DUV) curing and ozonated chemistry has been investigated. Results show that this technique effectively remove the photoresist from the wafer's surface and with better stripping rate when compared to normal ozonated chemistries photoresist stripping technique. This is expected to replace the sulfuric based and plasma stripping process step in Ie production.	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/2943
dc.subject	An environmentally friendly process has successfully removed	en_US
dc.subject	photoresist and organic post-etch residues from silicon surface.	en_US
dc.title	Photoresist stripping using ozone gas in lithography process	en_US
dc.type	Thesis	en_US

Now showing 1 - 1 of 1