Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices

Date

2016

Authors

Zainal, Norzaini

Abstract

This project was started with fabrication of porous GaAs (100) structure on GaAs (100) substrate using etching solution of H2S04: DMF with the optimum ratio of 1 :3. A welldefined circular shaped of porous GaAs was obtained with high uniformity, in comparison to other etching solutions. The porous GaAs sample was then used for growing GaN atop it using MOCVD technique. However, the growth could not proceed since we faced some technical problems. Alternatively, the GaN film was grown on porous GaAs using electron beam evaporator and RF-sputtering, followed by NH3 annealing post-treatment to ameliorate the quality of the GaN films. Through the surface morphology and XRD measurements, promising cubic properties in GaN film grown bye-beam evaporator is expected compared to growth by RF-sputtering.

Keywords

Cubic GaN , Efficient Energy

URI

http://hdl.handle.net/123456789/4183

Collections

Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Geran Penyelidikan

Full item page