Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices

dc.contributor.author	Zainal, Norzaini
dc.date.accessioned	2017-07-14T02:28:07Z
dc.date.available	2017-07-14T02:28:07Z
dc.date.issued	2016
dc.description.abstract	This project was started with fabrication of porous GaAs (100) structure on GaAs (100) substrate using etching solution of H2S04: DMF with the optimum ratio of 1 :3. A welldefined circular shaped of porous GaAs was obtained with high uniformity, in comparison to other etching solutions. The porous GaAs sample was then used for growing GaN atop it using MOCVD technique. However, the growth could not proceed since we faced some technical problems. Alternatively, the GaN film was grown on porous GaAs using electron beam evaporator and RF-sputtering, followed by NH3 annealing post-treatment to ameliorate the quality of the GaN films. Through the surface morphology and XRD measurements, promising cubic properties in GaN film grown bye-beam evaporator is expected compared to growth by RF-sputtering.	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/4183
dc.subject	Cubic GaN	en_US
dc.subject	Efficient Energy	en_US
dc.title	Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices	en_US
dc.type	Technical Report	en_US

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