Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
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Date
2011-10
Authors
Lew, Kam Chung
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
In this research, AFM lithography was performed to create nanoscale oxide
pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation
(LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns
will act as a mask to protect silicon layer during etching. The SiNWT structures
consist of a nanowire as a channel with contact pads of source (S), drain (D) and
lateral gate (G). The fabricated device structure was then wet chemically etched with
tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the
uncover silicon layer and oxide layer, respectively. Using AFM lithography, it was
found that the 9 volt tip voltage and 6 μm/s tip writing speed were the most suitable
parameters to fabricate nanostructure mask pattern of device. The TMAH etching at
65°C for 35s was found as the best condition to remove silicon layer completely
from uncovered SOI surface. After HF etching at room temperature for 5s, the
SiNWT with 99.05 nm channel thickness, 6.92 μm channel length, and 318.64 nm
channel to gate gaps was fabricated. From the Id-Vd and Id-Vg electrical
characteristic confirmed that the fabricated SiNWT is p-channel SiNWT.
Description
Keywords
Effect of tetramethylammonium hydroxide , formation of silicon nanowires transistor