Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography

Loading...
Thumbnail Image
Date
2011-10
Authors
Lew, Kam Chung
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively. Using AFM lithography, it was found that the 9 volt tip voltage and 6 μm/s tip writing speed were the most suitable parameters to fabricate nanostructure mask pattern of device. The TMAH etching at 65°C for 35s was found as the best condition to remove silicon layer completely from uncovered SOI surface. After HF etching at room temperature for 5s, the SiNWT with 99.05 nm channel thickness, 6.92 μm channel length, and 318.64 nm channel to gate gaps was fabricated. From the Id-Vd and Id-Vg electrical characteristic confirmed that the fabricated SiNWT is p-channel SiNWT.
Description
Keywords
Effect of tetramethylammonium hydroxide , formation of silicon nanowires transistor
Citation