Structural And Optical Studies Of Wide Band-Gap AlxGa1-XN (0 ≤X≤ 1) Semiconductors
Loading...
Date
2007
Authors
Ng, Sha Shiong
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
The aim of this project is to study the structural and optical properties of wideband gap AlxGa1-xN (O < x < 1) semiconductors by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive x-ray (EDX) analysis, atomic force microscopy (AFM) and xray diffraction (XRD) for structural characterization, and spectral reflection technique, ultraviolet-visible (UV-VIS), photoluminescence (PL), Raman, polarized infrared (IR) reflectance and polarized I R attenuated total reflection (ATR) spectroscopy for optical characterization.
Description
Keywords
Structural And Optical Studies Of Wide Band-Gap AlxGa1-XN (0 ≤X≤ 1) , Semiconductors