Structural And Optical Studies Of Wide Band-Gap AlxGa1-XN (0 ≤X≤ 1) Semiconductors
| dc.contributor.author | Ng, Sha Shiong | |
| dc.date.accessioned | 2022-02-11T08:54:07Z | |
| dc.date.available | 2022-02-11T08:54:07Z | |
| dc.date.issued | 2007 | |
| dc.description.abstract | The aim of this project is to study the structural and optical properties of wideband gap AlxGa1-xN (O < x < 1) semiconductors by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive x-ray (EDX) analysis, atomic force microscopy (AFM) and xray diffraction (XRD) for structural characterization, and spectral reflection technique, ultraviolet-visible (UV-VIS), photoluminescence (PL), Raman, polarized infrared (IR) reflectance and polarized I R attenuated total reflection (ATR) spectroscopy for optical characterization. | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/14635 | |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Sains Malaysia | en_US |
| dc.subject | Structural And Optical Studies Of Wide Band-Gap AlxGa1-XN (0 ≤X≤ 1) | en_US |
| dc.subject | Semiconductors | en_US |
| dc.title | Structural And Optical Studies Of Wide Band-Gap AlxGa1-XN (0 ≤X≤ 1) Semiconductors | en_US |
| dc.type | Thesis | en_US |
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