Development of n-type spin-on dopant for silicon devices
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Date
2009
Authors
Ahmad Kamil, Suraya
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Abstract
In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. This various doping concentration is very important as different type of device need different dopant concentration. The major focus and challenge of the research is in finding the exact ratio of chemical and conditions that would satisfy the preparation criterion of n-type SOD that is on par or perhaps even better than those available commercially.
Various characterization instruments were used to investigate the properties of SOD. Hall Effect measurement was done to obtain the sheet resistance, resistivity, mobility and sheet and bulk concentration of prepared SOD. SOD with different phosphorus concentration have been successfully attainable using sol-gel technology with doping concentration of 1016 to 1020 cm-3. Each SOD has its own recipe accordance to the phosphorus concentration.
Four-point probe was then used to verify the sheet resistance and resistivity measured from Hall Effect. The difference between sheet resistance and resistivity measured by Hall Effect and four-point probe is insignificant. Apart from the above mentioned instruments, Fourier transform infrared (FTIR) spectrometer has also been used to study the bond and composition of SOD. Composition and bond in SOD can be determined from absorbance IR spectra.
To prove the effectiveness of SOD prepared in the laboratory, that solution was used in device fabrication which is p-n junction (diode). Current-voltage (I-V)
characteristic system showed that the diode which uses prepared SOD in the lab and commercial SOD have almost similar behavior.
This research shows that SOD doped using different phosphorus concentrations have been successfully prepared using sol-gel technology. SOD can be prepared in the laboratory thus eliminating the need to buy commercial SOD anymore. However, further research need to be done for p-type SOD.
Description
Master
Keywords
Science Chemistry , n-type spin-on dopant , silicon devices