Formation of ZrO2 thin films by thermal oxidation of sputtered Zr on Si and SiC substrates

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dc.contributor.authorTedi Kurniawan
dc.date.accessioned2014-11-03T02:14:52Z
dc.date.available2014-11-03T02:14:52Z
dc.date.issued2009
dc.descriptionMasteren_US
dc.description.abstractZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process. Effects of oxidation temperature (500-800oC), oxidation time (5-60 min) and sputtering time (30-120 s) have been studied on p- or n-type Si substrate. Meanwhile, effects of annealing temperature (600-900o) in Ar ambient were studied on n-type 4H-SiC substrate. Sputtering process has been conducted by regulating base pressure, working pressure and DC power at 4.4x10-5 Torr, 3~6x10-3 Torr and 250 Watt. Meanwhile, for oxidation and annealing process, Ar and O2 flow rate were maintained at 150 ml/min. The effects of oxidation temperature and oxidation time have been studied by oxidizing 15-s sputtered Zr on p-type Si. High resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR) analyses showed that 3.5 nm ZrO2 and 3.5 nm interfacial layers (IL) in a mixture of SiOx and ZrxSiyOz were formed from oxidation at 500oC in 60 min. Furthermore, time-of-flight secondary ion mass spectroscopy (ToF-SIMS) profiles show that ZrxSiyOz formed after 15 min oxidation time and interface of ZrO2/IL contain Si-rich composition. Improvement in leakage current density (J), voltage breakdown (VB) and electric field breakdown (EB) properties have been shown by 15-60 min oxidation samples, with the optimum value has been reached by 30-min oxidized sample. Oxide dielectric constant (k) from this work ranges from 4.2 to 5.3. Observation on the effects of sputtering time on n-type Si was conducted after oxidation at 500oC in 15 min. Blistering phenomenon was observed at 90 and 120-s sputtered samples, while 60-s sputtered Zr has better electrical properties compared with the others. k value from this work ranges from 9.4 to 18. Observation on the effects of annealing temperature on n-type 4H-SiC substrate has been conducted after 60-s sputtered Zr oxidized at 500oC in 15 min. Annealing process has reduced J as high as 2 order of magnitude. On the other hand, VB and EB have also been reduced. k value from this work ranges from 22 to 80.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/258
dc.language.isoenen_US
dc.subjectMaterials & Minerals Resources Engineeringen_US
dc.subjectThin filmsen_US
dc.subjectThermal oxidationen_US
dc.titleFormation of ZrO2 thin films by thermal oxidation of sputtered Zr on Si and SiC substratesen_US
dc.typeThesisen_US
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