Investigation Of Metal-Organic Decomposed (Mod) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique

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dc.contributor.authorQuah, Hock Jin
dc.date.accessioned2018-10-26T03:18:26Z
dc.date.available2018-10-26T03:18:26Z
dc.date.issued2010-06
dc.description.abstractMetal-organic decomposed (MOD) CeO2 precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. This precursor has been prepared by cerium (III) acetylacetonate hydrate, methanol, and acetic acid as the starting materials. The effect of post-deposition annealing at different temperatures (600, 800 and 1000 °C) under the flow of argon gas has been performed on the MOD-derived CeO2 films on Si. Slow cooling at 5 °C/min was then accomplished for samples to cool down to room temperature. Post-deposition annealing temperatures (400, 600, 800 and 1000 °C) at three different ambients [argon, forming gas (mixture of H2 and N2), and oxygen] have been employed to investigate the effect of these parameters on CeO2 films spin-coated on GaN substrate. X-ray diffraction (XRD) has detected the presence of CeO2, α-Ce2O3, and cerium silicate (Ce2Si2O7) in CeO2/Si system. Besides, epitaxial-like (200) oriented CeO2 film has been produced in sample annealed at 600 °C and the dominance of this plane ceased with the increase of annealing temperature.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/6911
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectMetal-Organic Decomposed (Mod) Cerium Oxide (Ceo2)en_US
dc.subjectSilicon And Gallium Nitride Substrates Via Spin-On Coating Techniqueen_US
dc.titleInvestigation Of Metal-Organic Decomposed (Mod) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Techniqueen_US
dc.typeThesisen_US
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