Publication:
Investigation Of Radio Frequency Magnetron Sputtered Thulium Oxide Passivation Layer On Silicon And 4h-Silicon Carbide Substrates

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Date
2025-08
Authors
Deng, Junchen
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Abstract
Thulium oxide (Tm2O3) was deposited on silicon (Si) and 4H-silicon carbide (SiC) substrates using radio frequency (RF) magnetron sputtering technique, functioning as the high dielectric constant (k) passivation layers to address the performance limitations of power metal-oxide-semiconductor (MOS) devices, which arose from the low k silicon dioxide (SiO2) passivation layer and the narrow band gap of Si. The preliminary investigation of Tm2O3 as a passivation layer for Si-based MOS capacitors was conducted in a combined nitrogen-oxygen-nitrogen (NON) annealing ambient at temperature of 500, 600, 700, and 800oC. The results indicated that nitrogen ions were incorporated into the Tm2O3 passivation layer during the annealing process, creating a diffusion barrier layer at the interface.
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Investigation Of Radio Frequency Magnetron Sputtered Thulium Oxide Passivation Layer , Silicon And 4h-Silicon Carbide Substrates
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https://erepo.usm.my/handle/123456789/24398
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Institut Penyelidikan dan Teknologi Nano Optoelektronik (INOR) - Tesis