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Investigation Of Radio Frequency Magnetron Sputtered Thulium Oxide Passivation Layer On Silicon And 4h-Silicon Carbide Substrates

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dc.contributor.authorDeng, Junchen
dc.date.accessioned2026-06-18T02:03:40Z
dc.date.available2026-06-18T02:03:40Z
dc.date.issued2025-08
dc.description.abstractThulium oxide (Tm2O3) was deposited on silicon (Si) and 4H-silicon carbide (SiC) substrates using radio frequency (RF) magnetron sputtering technique, functioning as the high dielectric constant (k) passivation layers to address the performance limitations of power metal-oxide-semiconductor (MOS) devices, which arose from the low k silicon dioxide (SiO2) passivation layer and the narrow band gap of Si. The preliminary investigation of Tm2O3 as a passivation layer for Si-based MOS capacitors was conducted in a combined nitrogen-oxygen-nitrogen (NON) annealing ambient at temperature of 500, 600, 700, and 800oC. The results indicated that nitrogen ions were incorporated into the Tm2O3 passivation layer during the annealing process, creating a diffusion barrier layer at the interface.
dc.identifier.urihttps://erepo.usm.my/handle/123456789/24398
dc.language.isoen
dc.subjectInvestigation Of Radio Frequency Magnetron Sputtered Thulium Oxide Passivation Layer
dc.subjectSilicon And 4h-Silicon Carbide Substrates
dc.titleInvestigation Of Radio Frequency Magnetron Sputtered Thulium Oxide Passivation Layer On Silicon And 4h-Silicon Carbide Substrates
dc.typeResource Types::text::thesis::doctoral thesis
dspace.entity.typePublication
oairecerif.author.affiliationUniversiti Sains Malaysia
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