Publication:
Electrical characterization of 750v freewheeling diodes

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Date
2023-07
Authors
Aw, Yong Gi
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In recent year, semiconductor materials and devices with smaller dimensions has been occupy the pre-eminent technology as they are important in building the integrated circuit for many applications such as computer system, electronic entertainment system, medical diagnostic system, environmental monitoring system, etc. One of the key materials of this technological dominance is the metal oxide semiconductors which has important characteristic such as negligible standby potential control and reliable operation. However, in order to determine the material quality and device reliability, it is important to have non-destructive, accurate and easy-to-use electrical characterization technique available. This is to determine the important parameters of the device such as the carrier doping density, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and so on. Therefore, in this paper, a complete electrical characterization of freewheeling diode will be performed by using the source and measuring unit (SMU). In this case, current-voltage (I-V), capacitance-voltage(C-V) and product control monitoring measurement will be performed in order to study and determine those important parameters. The I-V measurement is performed to obtain a clearer view on the reverse breakdown voltage characteristic of the freewheeling diode by determining the breakdown voltage and the leakage current to analyze the reliability and performance of the freewheeling diode. Next, the C-V measurement is performed to determine the device series, resistance, depletion width, trap density, the carrier doping density and so on to know how the doping concentration of the device can affect the performance. Lastly, the product control monitoring measurement focused on the threshold voltage, contact resistance and material sheet resistance will be performed to ensure the product quality is up to specific requirements. All this measurement is performed on wafer level. Two-point probe and four-point probe method is used. Equipment such as TESLA200 200mm Semi Automated or Fully Automated on Wafer Power Device Characterization System, Keysight B1500A Semiconductor Device Parameter Analyzer, EasyEXPERT software, SPECSView and KLayout software will be required to use to perform all the measurement. All the measurement will be performed in InnoLab of Infineon Technologies (Kulim) Sdn. Bhd..
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