Design And Development Symmetrical Absorptive Mode Single Pole Double Throw (SPDT) Switch Design For Wimax Application
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Date
2010-03
Authors
Lim, Chee Chiang
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
The wireless communications market has gone through a tremendous incline of
paradigm shift in the last several years. Broadband technology via WiMAX has
rapidly become an established, global commodity required by a high percentage of
the population. The persistent growth in WiMAX applications introduces tremendous
challenges on component manufacturing to speed up new product release in shorter
time to market. As a result, there is an increasing demand for high power with low
insertion loss, high isolation and broadband PIN Diode switches for WiMAX
basestation application. This thesis presents the design and realization of
Symmetrical Absorptive Mode of Single Pole Double Throw Switch Design for
WiMAX Basestation Application based on Silicon (Si) PIN Diode structure. A novel
structure with LC matching sections is added to provide tunable broadband
characteristics. To achieve the low insertion loss PIN Diode design, the main focus is
to reduce the PIN Diode’s forward bias resistance. PIN Diodes are used broadly in
the implementation of front-end RF switches in many of the modem, multi-system
mobile and wireless designs due to its simplicity as a technology, small size and low
cost, reliability, and not in the least, excellent power handling and switching
performances at microwave frequencies. ADS have been used in the design process
for small signal analysis and fabricated using Rogers’s 4003C material. The SPDT
switch achieved maximum insertion loss of 0.75dB at TX and RX arm and minimum
isolation of 30dB over 2.3GHz – 2.7 GHz covering WiMAX frequency band. The
broadband absorptive SPDT switch using series shunt PIN Diodes topology with
good match return loss more than 15dB across 3 ports is presented. The high power
SPDT switch is able to achieve for EVM less than 0.8% with input power at 30dBm
using 802.16e modulation scheme. Avago Technologies HSMP-386x is unbeatable
PIN Diode selection to attained excellent result on both IIP3 (above 70dBm) and
t-rise switching time around 360ns.
Description
Keywords
High isolation and broadband PIN Diode switches , for WiMAX basestation application