Design And Development Symmetrical Absorptive Mode Single Pole Double Throw (SPDT) Switch Design For Wimax Application

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dc.contributor.authorLim, Chee Chiang
dc.date.accessioned2018-06-05T00:41:03Z
dc.date.available2018-06-05T00:41:03Z
dc.date.issued2010-03
dc.description.abstractThe wireless communications market has gone through a tremendous incline of paradigm shift in the last several years. Broadband technology via WiMAX has rapidly become an established, global commodity required by a high percentage of the population. The persistent growth in WiMAX applications introduces tremendous challenges on component manufacturing to speed up new product release in shorter time to market. As a result, there is an increasing demand for high power with low insertion loss, high isolation and broadband PIN Diode switches for WiMAX basestation application. This thesis presents the design and realization of Symmetrical Absorptive Mode of Single Pole Double Throw Switch Design for WiMAX Basestation Application based on Silicon (Si) PIN Diode structure. A novel structure with LC matching sections is added to provide tunable broadband characteristics. To achieve the low insertion loss PIN Diode design, the main focus is to reduce the PIN Diode’s forward bias resistance. PIN Diodes are used broadly in the implementation of front-end RF switches in many of the modem, multi-system mobile and wireless designs due to its simplicity as a technology, small size and low cost, reliability, and not in the least, excellent power handling and switching performances at microwave frequencies. ADS have been used in the design process for small signal analysis and fabricated using Rogers’s 4003C material. The SPDT switch achieved maximum insertion loss of 0.75dB at TX and RX arm and minimum isolation of 30dB over 2.3GHz – 2.7 GHz covering WiMAX frequency band. The broadband absorptive SPDT switch using series shunt PIN Diodes topology with good match return loss more than 15dB across 3 ports is presented. The high power SPDT switch is able to achieve for EVM less than 0.8% with input power at 30dBm using 802.16e modulation scheme. Avago Technologies HSMP-386x is unbeatable PIN Diode selection to attained excellent result on both IIP3 (above 70dBm) and t-rise switching time around 360ns.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/5658
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectHigh isolation and broadband PIN Diode switchesen_US
dc.subjectfor WiMAX basestation applicationen_US
dc.titleDesign And Development Symmetrical Absorptive Mode Single Pole Double Throw (SPDT) Switch Design For Wimax Applicationen_US
dc.typeThesisen_US
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