Development Of Tetragonal Zirconia Thin Film For Semiconductor Application
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Date
2011-08
Authors
Chan, Pooi Quan
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
In this work, the YSZ and Nb-YSZ film were produced by using chemical solution
deposition (CSD) technique via dip coating. The films were deposited on two
different substrates (silica glass and Si wafer). Various parameters were conducted in
this study including numbers of coatings, concentration of precursor solution,
annealing temperature and heating rate to obtain the optimum condition for coating
of the film. The precursor solution was prepared with the molar ratio of
ZrOCl2·8H2O to YNO3·6H2O at 95:5 and mixed with absolute ethanol as a solvent.
The effect of addition of Nb(OC2H5)5 into the YSZ precursor solution with molar
ratio 90:5:5 was also studied. Smooth and crack-free film was produced when the
substrate was dipped 3 times into 0.4 mol precursor solution. Tetragonal phase ZrO2
was formed when the film was annealed at temperature 550 ºC on glass substrate and
600 ºC on Si wafer in 30 minutes with heating rate 1.5 ºC/min. The films had
adhered well on the substrate. The surface roughness, RMS of the film was around 3
nm. Under the optimized condition, the thickness of the films was in the range of 150
nm to 200 nm. UV-vis analysis was carried out to obtain the optical band gap of the
films. The band gap energy for the film coated on silica glass was 2.60 eV and Si
wafer was 2.45 eV. However, with addition of Nb, the result showed that the band
gap energy of the film was similar when compared to YSZ film.
Description
Keywords
Development of tetragonal zirconia thin film , for semiconductor application