Development Of Tetragonal Zirconia Thin Film For Semiconductor Application

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dc.contributor.authorChan, Pooi Quan
dc.date.accessioned2018-12-10T06:22:22Z
dc.date.available2018-12-10T06:22:22Z
dc.date.issued2011-08
dc.description.abstractIn this work, the YSZ and Nb-YSZ film were produced by using chemical solution deposition (CSD) technique via dip coating. The films were deposited on two different substrates (silica glass and Si wafer). Various parameters were conducted in this study including numbers of coatings, concentration of precursor solution, annealing temperature and heating rate to obtain the optimum condition for coating of the film. The precursor solution was prepared with the molar ratio of ZrOCl2·8H2O to YNO3·6H2O at 95:5 and mixed with absolute ethanol as a solvent. The effect of addition of Nb(OC2H5)5 into the YSZ precursor solution with molar ratio 90:5:5 was also studied. Smooth and crack-free film was produced when the substrate was dipped 3 times into 0.4 mol precursor solution. Tetragonal phase ZrO2 was formed when the film was annealed at temperature 550 ºC on glass substrate and 600 ºC on Si wafer in 30 minutes with heating rate 1.5 ºC/min. The films had adhered well on the substrate. The surface roughness, RMS of the film was around 3 nm. Under the optimized condition, the thickness of the films was in the range of 150 nm to 200 nm. UV-vis analysis was carried out to obtain the optical band gap of the films. The band gap energy for the film coated on silica glass was 2.60 eV and Si wafer was 2.45 eV. However, with addition of Nb, the result showed that the band gap energy of the film was similar when compared to YSZ film.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/7242
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectDevelopment of tetragonal zirconia thin filmen_US
dc.subjectfor semiconductor applicationen_US
dc.titleDevelopment Of Tetragonal Zirconia Thin Film For Semiconductor Applicationen_US
dc.typeThesisen_US
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