Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.
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Date
2017
Authors
Kim Guan, Saw
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Abstract
Transparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on quartz and Si substrates.
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Keywords
semiconductor-metal transition , indium-doped zinc oxide , voltage measurements