Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.

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dc.contributor.authorKim Guan, Saw
dc.date.accessioned2017-10-16T01:59:46Z
dc.date.available2017-10-16T01:59:46Z
dc.date.issued2017
dc.description.abstractTransparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on quartz and Si substrates.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/4930
dc.subjectsemiconductor-metal transitionen_US
dc.subjectindium-doped zinc oxideen_US
dc.subjectvoltage measurementsen_US
dc.titleFundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.en_US
dc.typeTechnical Reporten_US
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