Investigation on the dc characteristics of the resonant tunneling diode through empirical modelling
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Date
2017-06
Authors
Tan Ker Lee
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Abstract
Double Barrier Resonant Tunnelling diode (DBRTD) is a two-terminal electronic
device that employs the principal of quantum mechanics. The working operation is
tunnelling electrons through a barrier at certain energy level in resonant state. In term of
quantum mechanics, the particles behave as wave-particle form. In this research work,
the working principle, theories, structural parameters as well as the current-voltage (I-V)
characteristics specialised in Negative Differential Resistance (NDR) need to be studied
through empirical modelling with curve fitting using MATLAB simulation tool and
physics equations. RTD is specialising in presenting the I-V relationship in NDR region
that opposes the nature Ohm’s law as the relationship is inversely proportional in the
simulated curve. This special feature characteristic however enables an ability to generate
a high speed frequency up to Terahertz. For the empirical modelling, device physical
dimensions can be identified after the unknown parameters are determined through I-V
curve fitting in MATLAB simulation. Mainly, the research is focus on two device
structures, GaAs/AlAs labelled as XMBE#66 and InGaAs/AlAs labelled as XMBE#230.
GaAs/AlAs modelled peak current density of 16290 A/cm2
, peak voltage of 0.315 V,
valley current density of 4294 A/cm2
, and valley voltage of 0.422 V. InGaAs/AlAs
modelled peak current density of 39820 A/cm2
, peak voltage of 0.305 V, valley current
density of 4447 A/cm2
, and valley voltage of 0.685 V. In short, InGaAs/AlAs device
would be able to give higher performance than GaAs/AlAs with a higher Peak-to-Voltage
Current Ratio (PVCR) of 8.954 while PVCR of GaAs/AlAs with a lower PVCR of 3.794.
The potential development of DBRTD would be unexpectedly great as the future high
end technologies and electronics high speed applications replacing the current
conventional diodes.