Investigation on the dc characteristics of the resonant tunneling diode through empirical modelling
| dc.contributor.author | Tan Ker Lee | |
| dc.date.accessioned | 2021-04-20T03:30:32Z | |
| dc.date.available | 2021-04-20T03:30:32Z | |
| dc.date.issued | 2017-06 | |
| dc.description.abstract | Double Barrier Resonant Tunnelling diode (DBRTD) is a two-terminal electronic device that employs the principal of quantum mechanics. The working operation is tunnelling electrons through a barrier at certain energy level in resonant state. In term of quantum mechanics, the particles behave as wave-particle form. In this research work, the working principle, theories, structural parameters as well as the current-voltage (I-V) characteristics specialised in Negative Differential Resistance (NDR) need to be studied through empirical modelling with curve fitting using MATLAB simulation tool and physics equations. RTD is specialising in presenting the I-V relationship in NDR region that opposes the nature Ohm’s law as the relationship is inversely proportional in the simulated curve. This special feature characteristic however enables an ability to generate a high speed frequency up to Terahertz. For the empirical modelling, device physical dimensions can be identified after the unknown parameters are determined through I-V curve fitting in MATLAB simulation. Mainly, the research is focus on two device structures, GaAs/AlAs labelled as XMBE#66 and InGaAs/AlAs labelled as XMBE#230. GaAs/AlAs modelled peak current density of 16290 A/cm2 , peak voltage of 0.315 V, valley current density of 4294 A/cm2 , and valley voltage of 0.422 V. InGaAs/AlAs modelled peak current density of 39820 A/cm2 , peak voltage of 0.305 V, valley current density of 4447 A/cm2 , and valley voltage of 0.685 V. In short, InGaAs/AlAs device would be able to give higher performance than GaAs/AlAs with a higher Peak-to-Voltage Current Ratio (PVCR) of 8.954 while PVCR of GaAs/AlAs with a lower PVCR of 3.794. The potential development of DBRTD would be unexpectedly great as the future high end technologies and electronics high speed applications replacing the current conventional diodes. | en_US |
| dc.identifier.uri | http://hdl.handle.net/123456789/12984 | |
| dc.language.iso | en | en_US |
| dc.title | Investigation on the dc characteristics of the resonant tunneling diode through empirical modelling | en_US |
| dc.type | Other | en_US |
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