Nanostructured porous Si and GaN Fabricated by electrochemical and laser Induced etching techniques.
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Date
2011-08
Authors
Alghafour, Asmiet Ramizy Abd
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
Struktur nano Si (PS) dan GaN (PGaN) berliang telah di sediakan oleh teknik punaran elektrokimia dan laser teraruh. Teknik frekuensi radio (RF) bantuan nitrogen plasma epitaksi alur molekul (PA-MBE) telah digunakan untuk menumbuhkan sampel GaN manakala wafer silikon komersial telah digunakan.
Porous Si (PS) and Porous GaN (PGaN) nanostructures have been produced by electrochemical and laser-induced etching techniques, respectively. Radiofrequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow the GaN sample while a commercial silicon wafer was used.
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Keywords
Nanostructured , Fabricated