Nanostructured porous Si and GaN Fabricated by electrochemical and laser Induced etching techniques.

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dc.contributor.authorAlghafour, Asmiet Ramizy Abd
dc.date.accessioned2019-01-02T03:27:10Z
dc.date.available2019-01-02T03:27:10Z
dc.date.issued2011-08
dc.description.abstractStruktur nano Si (PS) dan GaN (PGaN) berliang telah di sediakan oleh teknik punaran elektrokimia dan laser teraruh. Teknik frekuensi radio (RF) bantuan nitrogen plasma epitaksi alur molekul (PA-MBE) telah digunakan untuk menumbuhkan sampel GaN manakala wafer silikon komersial telah digunakan. Porous Si (PS) and Porous GaN (PGaN) nanostructures have been produced by electrochemical and laser-induced etching techniques, respectively. Radiofrequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow the GaN sample while a commercial silicon wafer was used.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/7426
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectNanostructureden_US
dc.subjectFabricateden_US
dc.titleNanostructured porous Si and GaN Fabricated by electrochemical and laser Induced etching techniques.en_US
dc.typeThesisen_US
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