Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment
Loading...
Date
2012-05
Authors
Wong, Yew Hoong
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Sains Malaysia
Abstract
Thin film Zr on Si and SiC were formed by sputtering. The films then underwent
simultaneous oxidation and nitridation in N2O. The effects of oxidation/nitridation
durations (5 20 min) and temperatures (500 1100oC) on the sputtered Zr/Si system and
the effects of oxidation/nitridation temperatures (400 900oC) and the concentrations of
N2O (10 100%) to the characteristics of the sputtered Zr/SiC system were studied.
Structural, chemical, and electrical properties of the samples were examined. X-ray
photoelectron spectroscopy results showed that ZrO2 thin film was formed with an
interfacial layer (IL) of Zr-silicate oxynitride (ZrSiON) on Si, while Zr-oxynitride (ZrON)
thin film was formed with an IL of ZrSiON and carbon nitride on SiC. Oxidation and
nitridation growth mechanisms has been proposed, after considering all results obtained
by energy filtered transmission electron microscope, X-ray diffractometer, Raman
spectrometer, Fourier transform infrared spectrometer, and/or atomic force microscope.
Electrical results showed that oxidized/nitrided Zr/Si at 700oC for 15 min in 100% N2O
has demonstrated the highest breakdown field (EB) of 13.60 MV/cm at 10-6 A/cm2. As for
Zr/SiC, the highest EB of 5.05 MV/cm at the same current density was attained by
oxidized/nitrided Zr at 500oC for 15 min. Further enhancement on the EB was recorded
(7.59 MV/cm) for Zr/SiC system oxidized/nitrided at the same parameters but with lower
concentration of N2O (10%). Oxide-semiconductor interface-trap density, effective oxide
charge, slow trap density, and barrier height were calculated and correlated with the
breakdown field of the investigated samples.
Description
Keywords
Investigation of simultaneous thermal oxidation , silicon carbide in nitrous oxide gas environment