Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment

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dc.contributor.authorWong, Yew Hoong
dc.date.accessioned2019-06-28T01:31:18Z
dc.date.available2019-06-28T01:31:18Z
dc.date.issued2012-05
dc.description.abstractThin film Zr on Si and SiC were formed by sputtering. The films then underwent simultaneous oxidation and nitridation in N2O. The effects of oxidation/nitridation durations (5 20 min) and temperatures (500 1100oC) on the sputtered Zr/Si system and the effects of oxidation/nitridation temperatures (400 900oC) and the concentrations of N2O (10 100%) to the characteristics of the sputtered Zr/SiC system were studied. Structural, chemical, and electrical properties of the samples were examined. X-ray photoelectron spectroscopy results showed that ZrO2 thin film was formed with an interfacial layer (IL) of Zr-silicate oxynitride (ZrSiON) on Si, while Zr-oxynitride (ZrON) thin film was formed with an IL of ZrSiON and carbon nitride on SiC. Oxidation and nitridation growth mechanisms has been proposed, after considering all results obtained by energy filtered transmission electron microscope, X-ray diffractometer, Raman spectrometer, Fourier transform infrared spectrometer, and/or atomic force microscope. Electrical results showed that oxidized/nitrided Zr/Si at 700oC for 15 min in 100% N2O has demonstrated the highest breakdown field (EB) of 13.60 MV/cm at 10-6 A/cm2. As for Zr/SiC, the highest EB of 5.05 MV/cm at the same current density was attained by oxidized/nitrided Zr at 500oC for 15 min. Further enhancement on the EB was recorded (7.59 MV/cm) for Zr/SiC system oxidized/nitrided at the same parameters but with lower concentration of N2O (10%). Oxide-semiconductor interface-trap density, effective oxide charge, slow trap density, and barrier height were calculated and correlated with the breakdown field of the investigated samples.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/8433
dc.language.isoenen_US
dc.publisherUniversiti Sains Malaysiaen_US
dc.subjectInvestigation of simultaneous thermal oxidationen_US
dc.subjectsilicon carbide in nitrous oxide gas environmenten_US
dc.titleInvestigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environmenten_US
dc.typeThesisen_US
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